DocumentCode :
439460
Title :
A dynamically controllable DC/DC level converter and its application to high-speed, low-power circuits
Author :
Enomoto, Tadayoshi ; Shikano, Hiroaki ; Iwata, Haruya ; Fujii, Masahiro ; Yoshida, Nobuhide
Author_Institution :
Chuo University, Tokyo, Japan
fYear :
2000
fDate :
19-21 Sept. 2000
Firstpage :
15
Lastpage :
18
Abstract :
A new DC/DC level converter has been developed for use in high-speed, low-power circuits. The level converter can increase the DC voltage which is supplied to an active-load circuit on request, or supply a minimal DC voltage to a load circuit in the stand-by mode. 32-word register files and 512-bit cache SRAMs were developed using 0.25-µm HEMT technology to examine the effectiveness of the DC/DC level converter in power reduction. Experimental results showed that the power dissipation P of the 32-word register file with on-chip DC/DC level converters was 1.04 W, a reduction to 57.1% of that of an equivalent conventional register file, while the operating frequency fc was 6.42 GHz that is 92.9% of fcfor the conventional register file. P for the 512-bit cache SRAM with the new DC/DC level converters was 34.3 mW, 89.7% of the value for an equivalent conventional cache SRAM, with the read-access time of 455 psec, only 1.1% longer than that of the conventional cache SRAM. The DC/DC level converter technology is also useful in that it reduces P due to subthreshold currents in CMOS and pass-transistor logic circuits.
Keywords :
CMOS logic circuits; CMOS technology; Frequency conversion; HEMTs; Logic circuits; Power dissipation; Random access memory; Registers; Subthreshold current; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location :
Stockholm, Sweden
Type :
conf
Filename :
1471202
Link To Document :
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