• DocumentCode
    439460
  • Title

    A dynamically controllable DC/DC level converter and its application to high-speed, low-power circuits

  • Author

    Enomoto, Tadayoshi ; Shikano, Hiroaki ; Iwata, Haruya ; Fujii, Masahiro ; Yoshida, Nobuhide

  • Author_Institution
    Chuo University, Tokyo, Japan
  • fYear
    2000
  • fDate
    19-21 Sept. 2000
  • Firstpage
    15
  • Lastpage
    18
  • Abstract
    A new DC/DC level converter has been developed for use in high-speed, low-power circuits. The level converter can increase the DC voltage which is supplied to an active-load circuit on request, or supply a minimal DC voltage to a load circuit in the stand-by mode. 32-word register files and 512-bit cache SRAMs were developed using 0.25-µm HEMT technology to examine the effectiveness of the DC/DC level converter in power reduction. Experimental results showed that the power dissipation P of the 32-word register file with on-chip DC/DC level converters was 1.04 W, a reduction to 57.1% of that of an equivalent conventional register file, while the operating frequency fc was 6.42 GHz that is 92.9% of fcfor the conventional register file. P for the 512-bit cache SRAM with the new DC/DC level converters was 34.3 mW, 89.7% of the value for an equivalent conventional cache SRAM, with the read-access time of 455 psec, only 1.1% longer than that of the conventional cache SRAM. The DC/DC level converter technology is also useful in that it reduces P due to subthreshold currents in CMOS and pass-transistor logic circuits.
  • Keywords
    CMOS logic circuits; CMOS technology; Frequency conversion; HEMTs; Logic circuits; Power dissipation; Random access memory; Registers; Subthreshold current; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • Filename
    1471202