• DocumentCode
    439465
  • Title

    A 1.8V MOSFET-only sigma-delta modulator using compensated MOS-capacitors in depletion with substrate biasing

  • Author

    Tille, Thomas ; Sauerbrey, Jens ; Mauthe, Manfred ; Kraus, Werner ; Schmitt-Landsiedel, Doris

  • Author_Institution
    Technical University of Munich, Munich, Germany
  • fYear
    2000
  • fDate
    19-21 Sept. 2000
  • Firstpage
    37
  • Lastpage
    40
  • Abstract
    A low-voltage high-linearity MOSFET-Only ΣΔ modulator for speech band applications is presented. The modulator uses substrate biased MOSFETs in the depletion region as capacitors, linearized by a series compensation technique. A 2nd-order fully-differential single-loop architecture has been realized in a conventional 0.25µm digital n-well CMOS process without extra layers for capacitors. An SNDR of 72dB is obtained with 8kHz signal bandwidth. The circuit consumes about 1mW from a single 1.8V power supply and occupies an area of 0.08mm2.
  • Keywords
    CMOS process; Capacitance; Delta-sigma modulation; Linearity; MOS capacitors; MOSFET circuits; Speech; Switched capacitor circuits; Switching circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • Filename
    1471207
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439465