Title :
A 1.8V MOSFET-only sigma-delta modulator using compensated MOS-capacitors in depletion with substrate biasing
Author :
Tille, Thomas ; Sauerbrey, Jens ; Mauthe, Manfred ; Kraus, Werner ; Schmitt-Landsiedel, Doris
Author_Institution :
Technical University of Munich, Munich, Germany
Abstract :
A low-voltage high-linearity MOSFET-Only ΣΔ modulator for speech band applications is presented. The modulator uses substrate biased MOSFETs in the depletion region as capacitors, linearized by a series compensation technique. A 2nd-order fully-differential single-loop architecture has been realized in a conventional 0.25µm digital n-well CMOS process without extra layers for capacitors. An SNDR of 72dB is obtained with 8kHz signal bandwidth. The circuit consumes about 1mW from a single 1.8V power supply and occupies an area of 0.08mm2.
Keywords :
CMOS process; Capacitance; Delta-sigma modulation; Linearity; MOS capacitors; MOSFET circuits; Speech; Switched capacitor circuits; Switching circuits; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location :
Stockholm, Sweden