• DocumentCode
    439584
  • Title

    Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 µm CMOS

  • Author

    Vathulya, V.R. ; Sowlati, T. ; Leenaerts, D.

  • Author_Institution
    Philips Research, Briarcliff Manor, NY, USA
  • fYear
    2001
  • fDate
    18-20 Sept. 2001
  • Firstpage
    57
  • Lastpage
    60
  • Abstract
    In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 µn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.
  • Keywords
    Bluetooth; CMOS technology; Communication standards; Hot carrier effects; Operational amplifiers; Power amplifiers; Power generation; RF signals; Radio frequency; Radiofrequency amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2001. ESSCIRC 2001. Proceedings of the 27th European
  • Conference_Location
    Villach, Austria
  • Type

    conf

  • Filename
    1471333
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439584