Title :
A 2.5Gb/s CMOS transimpedance amplifier using novel active inductor load
Author :
Oh, Yong-Hun ; Lee, Sang-Gug ; Park, H.H.
Author_Institution :
Information and Communication University, Daejeon, Korea
Abstract :
A high-speed and low power transimpedance amplifier for 2.5Gb/s applications has been implemented in 0.35µm CMOS technology. For higher transimpedance gain and wider bandwidth, in this paper, an inductive shunt peaking technique is applied using a novel active inductor load that can be used at 1 ∼ 2GHz range. Measured performance shows 1.45GHz bandwidth with 57dBΩ transimpedance gain and the power consumption of about 50mW.
Conference_Titel :
Solid-State Circuits Conference, 2001. ESSCIRC 2001. Proceedings of the 27th European
Conference_Location :
Villach, Austria
