Title :
A monolithic 2.45GHz power amplifier in SiGe-bipolar with 0.4W output power and 53% PAE at 2V
Author :
Bakalski, W. ; Simburger, W. ; Thuringer, R. ; Rest, M. ; Ahrens, C. ; Kuhn, C. ; Scholtz, A.L.
Author_Institution :
Technical University of Vienna, Vienna, Austria
Abstract :
A monolithic radio frequency power amplifier for 1.9- 2.6 GHz has been realized in a 0.25 µm SiGe-bipolar technology. The balanced 2-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching and is operating down to supply voltages as low as 1 V. A microstrip line balun acts as output matching network. At 1 V, 1.5 V, 2 V supply voltages output powers of 20 dBm, 23.5 dBm, 26 dBm are achieved at 2.45 GHz. The respective power added efficiency is 36%, 49.5%, 53%. The small-signal gain is 33 dB.
Keywords :
Impedance matching; Low voltage; Microstrip; Network-on-a-chip; Power amplifiers; Power generation; Power supplies; Radio frequency; Radiofrequency amplifiers; Transformers;
Conference_Titel :
Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European
Conference_Location :
Florence, Italy
