DocumentCode
439774
Title
A 1.3dB NF CMOS LNA for GPS with 3kV HBM ESD-protection
Author
Leroux, P. ; Steyaert, M. ; Vassilev, V. ; Groeseneken, G.
Author_Institution
K.U. Leuven, Leuven-Heverlee, Belgium
fYear
2002
fDate
24-26 Sept. 2002
Firstpage
335
Lastpage
338
Abstract
This paper presents an ESD-protected 0.25 µm CMOS Low Noise Amplifier (LNA) for the Global Positioning System (GPS) operating at 1.57GHz. The performance specifications of high-end GPS receivers are quite severe, requiring designs with good sensitivity as well as LNAs with low noise figure and high gain. The LNA in this work features a 1.3dB noise figure and a power gain of 16.5dB. The input ESD-protection is more than 3kV Human Body Model (HBM) and the power consumption is only 9mW.
Keywords
CMOS technology; Circuit noise; Electrostatic discharge; Global Positioning System; Low-noise amplifiers; Noise figure; Noise measurement; Parasitic capacitance; Protection; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European
Conference_Location
Florence, Italy
Type
conf
Filename
1471533
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