A new voltage reference topology based on subthreshold MOSFETs

In this communication a new low-voltage low-power CMOS voltage reference independent of temperature is presented. It is based on subthreshold MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a subthreshold MOSFET. The circuit, designed with a standard 1.2-µm CMOS technology, exhibits a stable voltage of about 300 mV with a temperature coefficient of 87 ppm/°C in the range [0°, + 70°] which increases up to 288 ppm/°C in the range [- 40°, + 120°].