A high-speed monolithic amplifier for CRT drivers in SOI

An integrated power amplifier is developed for CRT drivers using a high-voltage high-speed silicon-on-insulator process technology. A measured fall-time of 4.07ns is achieved for a 44.8V change on a 10.5pF load, corresponding to a slew-rate of 8800V/µs, while maintaining a static power dissipation of less than 0.7W per channel. This represents state-of-the-art performance for CRT driver integrated circuits, and establishes thin-layer silicon-on-insulator technology as a high-voltage high-frequency mixed-mode monolithic technology.