• DocumentCode
    439842
  • Title

    92 GHz cut-off frequency InP double channel HEMT based coplanar distributed amplifier for 40 Gbit/s applications and beyond

  • Author

    Meliani, C. ; Post, G. ; Decobert, J. ; Mouzannar, W. ; Rondeau, G. ; Dutisseuil, E. ; Lefevre, R.

  • Author_Institution
    OPTO+, Alcatel R&I, Marcoussis, France
  • fYear
    2002
  • fDate
    24-26 Sept. 2002
  • Firstpage
    615
  • Lastpage
    617
  • Abstract
    In this paper, we present the design, fabrication and measurements of an ultra broad band amplifier with 92 GHz cut-off frequency intended for ETDM transmission applications over 40 Gbit/s. The circuit is based on InP double channel HEMT technology developed in OPTO+ to get high frequeny-breakdown voltage product. We will discuss the use of coplanar wave-guide lines and low impedance bias micro-strip transmission lines in such a design. We will also highlight the need of largest bandwidths for 40 Gbit/s eye diagram quality and the needed gain bandwidth for 80 Gbit/s ETDM communications.
  • Keywords
    Bandwidth; Circuits; Cutoff frequency; Distributed amplifiers; Fabrication; Frequency measurement; HEMTs; Impedance; Indium phosphide; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European
  • Conference_Location
    Florence, Italy
  • Type

    conf

  • Filename
    1471602