Very low power high temperature stability bandgap reference voltage

Due to the expansion of the portable applications and the battery operated products, great interest is given for design methodology for low consumption. When designing a process sensitive devices such as bandgap reference circuits (BGR), a perfect match between the simulation and the measurement on silicon have to be ensured. We present in this paper a very low current high temperature stability BiCMOS BGR design. A low current dedicated process characterization procedure is explained. The micro-power BGR design methodology is presented.