• DocumentCode
    439895
  • Title

    High-performance and low-voltage divider circuits fabricated in SiGe:C HBT technology

  • Author

    Winkler, W. ; Borngraber, Johannes ; Heinemann, B. ; Weger, P. ; Gustat, H.

  • Author_Institution
    IHP, Frankfurt (Oder), Germany
  • fYear
    2002
  • fDate
    24-26 Sept. 2002
  • Firstpage
    827
  • Lastpage
    830
  • Abstract
    Dynamic and static frequency dividers with a maximum operating frequency of up to 72 GHz were developed for use in wired and wireless communication systems. The frequency dividers were fabricated with an low-cost 0.25 µm SiGe:C BiCMOS technology. The divider circuits were measured at wafer level and at module level. The first focus of the paper is on high speed to cover demands of high data rate communication. The second focus is on low voltage and low power operation with supply voltages down to 1V and sub 1 mW power consumption.
  • Keywords
    BiCMOS integrated circuits; Delay; Frequency conversion; Heterojunction bipolar transistors; Microwave transistors; Optical fiber communication; Optical fiber devices; Optical fibers; Radio frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European
  • Conference_Location
    Florence, Italy
  • Type

    conf

  • Filename
    1471655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439895