• DocumentCode
    439913
  • Title

    Silane deposited SiO2in LSI

  • Author

    Wagner, S.R. ; Doelp, W.L., Jr.

  • Volume
    13
  • fYear
    1967
  • fDate
    1967
  • Firstpage
    18
  • Lastpage
    18
  • Abstract
    Vapor deposited SiO2has been evaluated as the dielectric in the multilevel interconnection of bipolar arrays containing about 1000 crossovers, 150 vias, and 750 components. The packaging density of these arrays is 100,000 components/in2. The vapor plating method has been shown to be compatible with silicon monolithic circuit fabrication and results in the deposition of conformal SiO2films of low pinhole density. The vapor plating system and the characteristics of SiO2deposited under several conditions are discussed. The techniques used to characterize the films are described and those for fabricating arrays are discussed.
  • Keywords
    Contacts; Integrated circuit interconnections; Logic arrays; Metallization; Power dissipation; Propagation delay; Resistors; Silicon compounds; Switches; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1967 International
  • Conference_Location
    IEEE
  • Type

    conf

  • Filename
    1474859
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439913