DocumentCode :
439927
Title :
A practical high gain lateral PNP for integrated circuit use
Author :
Hatcher, O.W., Jr.
Volume :
13
fYear :
1967
fDate :
1967
Firstpage :
12
Lastpage :
12
Keywords :
Charge carrier processes; Circuits; Doping; Electron devices; Epitaxial layers; Geometry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1967 International
Conference_Location :
IEEE
Type :
conf
Filename :
1475026
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=439927