• DocumentCode
    439932
  • Title

    Design of silicon planar diodes for avalanche transit time oscillators

  • Author

    Reddi, V.G.K.

  • Volume
    15
  • fYear
    1969
  • fDate
    1969
  • Firstpage
    16
  • Lastpage
    16
  • Abstract
    It is well recognized that a mesa diode, is ideal for avalanche transit time oscillator application, not only for achieving uniform avalanche breakdown, but also to reduce the dielectric losses associated with the device itself. Reliable operation of mesa diodes, however, requires packaging or hermetic sealing. There are certain applications where packaged devices are not suitable and the diodes need, to be operated in open ambient, such as in a microwave integrated circuit. For such applications, a passivated junction diode will be more desirable.
  • Keywords
    Application specific integrated circuits; Avalanche breakdown; Dielectric devices; Dielectric losses; Diodes; Integrated circuit packaging; Integrated circuit reliability; Microwave devices; Oscillators; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1969 International
  • Conference_Location
    IEEE
  • Type

    conf

  • Filename
    1475962