DocumentCode
439932
Title
Design of silicon planar diodes for avalanche transit time oscillators
Author
Reddi, V.G.K.
Volume
15
fYear
1969
fDate
1969
Firstpage
16
Lastpage
16
Abstract
It is well recognized that a mesa diode, is ideal for avalanche transit time oscillator application, not only for achieving uniform avalanche breakdown, but also to reduce the dielectric losses associated with the device itself. Reliable operation of mesa diodes, however, requires packaging or hermetic sealing. There are certain applications where packaged devices are not suitable and the diodes need, to be operated in open ambient, such as in a microwave integrated circuit. For such applications, a passivated junction diode will be more desirable.
Keywords
Application specific integrated circuits; Avalanche breakdown; Dielectric devices; Dielectric losses; Diodes; Integrated circuit packaging; Integrated circuit reliability; Microwave devices; Oscillators; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1969 International
Conference_Location
IEEE
Type
conf
Filename
1475962
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