DocumentCode :
439932
Title :
Design of silicon planar diodes for avalanche transit time oscillators
Author :
Reddi, V.G.K.
Volume :
15
fYear :
1969
fDate :
1969
Firstpage :
16
Lastpage :
16
Abstract :
It is well recognized that a mesa diode, is ideal for avalanche transit time oscillator application, not only for achieving uniform avalanche breakdown, but also to reduce the dielectric losses associated with the device itself. Reliable operation of mesa diodes, however, requires packaging or hermetic sealing. There are certain applications where packaged devices are not suitable and the diodes need, to be operated in open ambient, such as in a microwave integrated circuit. For such applications, a passivated junction diode will be more desirable.
Keywords :
Application specific integrated circuits; Avalanche breakdown; Dielectric devices; Dielectric losses; Diodes; Integrated circuit packaging; Integrated circuit reliability; Microwave devices; Oscillators; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1969 International
Conference_Location :
IEEE
Type :
conf
Filename :
1475962
Link To Document :
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