Title :
Millimeter-wave silicon Impatt diodes
Author :
Edwards, R. ; Misawa, Tetsuya ; Iglesias, D.E. ; Decker, Vincent
Abstract :
Silicon Impatt diodes have been fabricated for operation at frequencies in the vicinity of 50 GHz and 100 GHz. Advances in diode fabrication methods together with refinements in oscillator circuitry have resulted in improved state-of-the-art values for the (frequency)2times (power output) measure of avalanche diode performance.
Keywords :
Diodes; Silicon;
Conference_Titel :
Electron Devices Meeting, 1969 International
Conference_Location :
IEEE
