DocumentCode :
439962
Title :
Silicon gate complementary MOS structure with field shield
Author :
Lin, H.C. ; Hayes, Patrick J
Volume :
17
fYear :
1971
fDate :
1971
Firstpage :
26
Lastpage :
26
Abstract :
Conventional aluminum gate complementary MOS transistor structures normally have the p-channel transistor fabricated in a low concentration ( 
impurity atoms/cm3) (1,0,0) oriented silicon substrate and the n-channel transistor fabricated in an isolated p-type "well" with a surface concentration on the order of 1016impurity atoms/cm3diffused into the n-type substrate. If silicon gate technology is to be implemented for CMOS structures of similar background concentrations with a p-doped gate used for the p-channel transistors and an n-doped gate used for the n-channel transistors, the p-channel devices tend to be in depletion mode which is undesirable for switching circuits.
impurity atoms/cm3) (1,0,0) oriented silicon substrate and the n-channel transistor fabricated in an isolated p-type "well" with a surface concentration on the order of 1016impurity atoms/cm3diffused into the n-type substrate. If silicon gate technology is to be implemented for CMOS structures of similar background concentrations with a p-doped gate used for the p-channel transistors and an n-doped gate used for the n-channel transistors, the p-channel devices tend to be in depletion mode which is undesirable for switching circuits.Keywords :
Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1971 International
Conference_Location :
IEEE
Type :
conf
Filename :
1476694
Link To Document :
