GaAs FET technology and performance

GaAs FETs have been fabricated which show fmaxto be greater than 30 GHz, and a noise figure of 3 dB at 4 GHz and 4 dB at 8 GHz. This excellent performance achieved using a gate length of 2 µm and conventional masking techniques, results from low contact resistance and high electron mobility of the epitaxial film. Because of the relatively large dimensions of the gate no special methods such as electron beam exposure or projection masking are required.