A self-isolation scheme for monolithic integrated circuits

A new technique for fabricating monolithic integrated circuits with active and passive components on a silicon substrate will be presented. Conventionally, integrated circuits are made by diffusing N⁺impurities in a P^-substrate followed by an epitaxial deposition of N-type silicon. A subsequent P⁺diffusion around the N⁺buried layer defined the P-N junction-isolated N/N⁺(N over N⁺) islands where the transistors could be formed by making P base and N⁺emitter diffusions.