Title :
Comparison of Auger depth profiles and C/V—Measurements on silicon oxides on Si
Author :
Johannessen, J.S. ; Spicer, W.E. ; Strausser, Y.E.
Keywords :
Discharges; Displays; MOS capacitors; MOS devices; Morphology; Silicon; Solid modeling; Solid state circuits; Voltage; Wafer bonding;
Conference_Titel :
Electron Devices Meeting, 1975 International
Conference_Location :
IEEE
