Title :
Performance of ion-implanted GaAs MESFETs
Author :
Higgins, J.A. ; Welch, B.M. ; Eisen, F.H. ; Robinson, G.D.
Keywords :
FETs; Gallium arsenide; Low-frequency noise; MESFETs; Noise measurement; Protons; Radiofrequency amplifiers; Scattering parameters; Semiconductor device noise; Solid state circuits;
Conference_Titel :
Electron Devices Meeting, 1975 International
Conference_Location :
IEEE
