DocumentCode :
440035
Title :
Oxygen recoil during implantation of as into SiO2films
Author :
Goetzberger, A. ; Bartelink, D.J. ; McVittie, James P. ; Gibbons, J.F.
Volume :
21
fYear :
1975
fDate :
1975
Firstpage :
15
Lastpage :
16
Keywords :
Current measurement; Implants; Impurities; Oxygen; Photonic band gap; Semiconductor films; Switches; Temperature distribution; Temperature measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1975 International
Conference_Location :
IEEE
Type :
conf
Filename :
1478347
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=440035
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