Abstract :
Conventional planar silicon chip processing will be contrasted with the increased device functions available when nonplanar, topologically structured methods are used to fabricate specialized devices in a batch-fabricated manner. Once dismissed as "cute" technology, anisotropic V-groove etching, precision gold plating, anisotropic epitaxial growth, and self-aligned metal deposition are now resulting in a variety of important new device structures. A discussion of the limitations of topologically structured methods and their ultimate impact on semiconductor device performance will be made.
