Title :
A compatible bipolar and JFET process
Abstract :
This paper describes the integration of a high frequency, low noise, vertical JFET with bipolar circuits without additional processing steps. The performance of the JFET is presented and an analysis of the short-channel effect of the JFET is discussed in detail.
Keywords :
Bipolar transistors; Boron; Breakdown voltage; Circuit noise; Dielectric breakdown; Frequency; High speed optical techniques; JFET circuits; Laboratories; Lithography;
Conference_Titel :
Electron Devices Meeting, 1976 International
Conference_Location :
IEEE
