DocumentCode :
440051
Title :
VMOS EPROM and buried source RAM devices
Author :
Barnes, J.J. ; Rodgers, T.J.
Volume :
22
fYear :
1976
fDate :
1976
Firstpage :
2
Lastpage :
3
Keywords :
Capacitance; Capacitors; Circuits; DRAM chips; EPROM; Legged locomotion; Nonvolatile memory; Random access memory; Read-write memory; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1976 International
Conference_Location :
IEEE
Type :
conf
Filename :
1478847
Link To Document :
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