• DocumentCode
    440051
  • Title

    VMOS EPROM and buried source RAM devices

  • Author

    Barnes, J.J. ; Rodgers, T.J.

  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    2
  • Lastpage
    3
  • Keywords
    Capacitance; Capacitors; Circuits; DRAM chips; EPROM; Legged locomotion; Nonvolatile memory; Random access memory; Read-write memory; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Conference_Location
    IEEE
  • Type

    conf

  • Filename
    1478847