DocumentCode :
440060
Title :
Determination of low-noise ion implantation profiles in MOS transistors and related process and device modeling
Author :
Zimmer, G. ; Gabler, L. ; Hoefflinger, B. ; Schemmert, W. ; Schneider, Jurgen
Volume :
22
fYear :
1976
fDate :
1976
Firstpage :
12
Lastpage :
13
Keywords :
Annealing; Boron; Charge carrier processes; Impurities; Ion implantation; MOSFETs; Niobium; Scattering; Tail; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1976 International
Conference_Location :
IEEE
Type :
conf
Filename :
1478856
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=440060
