Title :
Chalcogen incorporation in Cu(InGa)(SeS)2 coevaporated thin films
Author :
Stavrides, Alex ; Yapp, Clifford ; Shafarman, William ; Aparicio, Roger ; Opila, Robert ; Birkmire, Robert
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
Thin films of Cu(InGa)(SeS)2 have been deposited by elemental coevaporation. Characterization of the relative incorporation of S and Se in the film as a function of the S/(S+Se) content in the vapor shows that S is preferentially incorporated in a Cu-rich film, whereas Se is preferentially incorporated into a Cu-poor film. In most cases, a film with a single phase can not be deposited. Cu-rich films have a CuS layer on top of a chalcopyrite layer. Many Cu-poor films have a layered chalcopyrite structure with a composition that approximates the vapor composition on the bottom, and a composition richer in Se at the surface. Mechanisms for this vertically segregated behavior are discussed with respect to relative S and Se incorporation.
Keywords :
copper compounds; gallium compounds; indium compounds; semiconductor thin films; ternary semiconductors; vacuum deposition; Cu(InGa)(SeS)2; Cu(InGa)(SeS)2 coevaporated thin films; Cu-poor film; Cu-rich film; chalcogen incorporation; chalcopyrite layer; elemental coevaporation; layered chalcopyrite structure; vapor composition; vertically segregated behavior; Energy conversion; Material properties; Photonic band gap; Spectroscopy; Sputtering; Substrates; Temperature; Transistors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488115
