• DocumentCode
    440089
  • Title

    Characteristics of CdTe films of different compositions fabricated by CMBD

  • Author

    Razykov, T.M. ; Acher, R. ; Crisalle, O.D. ; Craciun, V. ; Anderson, T.J. ; Kouchkarov, K. ; Li, S.S. ; Goswami, D.Y. ; Vijayaragha, S.

  • Author_Institution
    Phys. Inst., Acad. of Sci., Tashkent, Uzbekistan
  • fYear
    2005
  • fDate
    3-7 Jan. 2005
  • Firstpage
    484
  • Lastpage
    486
  • Abstract
    CdTe films with near stoichiometric compositions and cadmium-rich compositions were fabricated by a novel low-cost chemical molecular beam deposition (CMBD) technique at atmospheric pressure under hydrogen or nitrogen gas flow. X-ray diffraction analysis and scanning electron microscopy studies show different grain growth by CMBD depending on the composition of samples. Those grown with cadmium rich compositions were of poor quality with large discontinuous island structures. On the other hand, samples grown with near stoichiometric compositions were polycrystalline with large grain size and uniform thickness. Additionally, films grown under nitrogen flow contained a cadmium tellurium oxide phase while those grown under hydrogen did not.
  • Keywords
    II-VI semiconductors; X-ray diffraction; cadmium compounds; grain growth; grain size; island structure; liquid phase deposition; scanning electron microscopy; semiconductor growth; semiconductor thin films; stoichiometry; CMBD; CdTe; CdTe film characteristics; X-ray diffraction; cadmium tellurium oxide phase; cadmium-rich compositions; chemical molecular beam deposition; discontinuous island structure; grain growth; grain size; polycrystallinity; scanning electron microscopy; stoichiometric compositions; Chemical engineering; Fabrication; Fluid flow; Hydrogen; Nitrogen; Photovoltaic cells; Scanning electron microscopy; Sputtering; Tellurium; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488175
  • Filename
    1488175