DocumentCode
440089
Title
Characteristics of CdTe films of different compositions fabricated by CMBD
Author
Razykov, T.M. ; Acher, R. ; Crisalle, O.D. ; Craciun, V. ; Anderson, T.J. ; Kouchkarov, K. ; Li, S.S. ; Goswami, D.Y. ; Vijayaragha, S.
Author_Institution
Phys. Inst., Acad. of Sci., Tashkent, Uzbekistan
fYear
2005
fDate
3-7 Jan. 2005
Firstpage
484
Lastpage
486
Abstract
CdTe films with near stoichiometric compositions and cadmium-rich compositions were fabricated by a novel low-cost chemical molecular beam deposition (CMBD) technique at atmospheric pressure under hydrogen or nitrogen gas flow. X-ray diffraction analysis and scanning electron microscopy studies show different grain growth by CMBD depending on the composition of samples. Those grown with cadmium rich compositions were of poor quality with large discontinuous island structures. On the other hand, samples grown with near stoichiometric compositions were polycrystalline with large grain size and uniform thickness. Additionally, films grown under nitrogen flow contained a cadmium tellurium oxide phase while those grown under hydrogen did not.
Keywords
II-VI semiconductors; X-ray diffraction; cadmium compounds; grain growth; grain size; island structure; liquid phase deposition; scanning electron microscopy; semiconductor growth; semiconductor thin films; stoichiometry; CMBD; CdTe; CdTe film characteristics; X-ray diffraction; cadmium tellurium oxide phase; cadmium-rich compositions; chemical molecular beam deposition; discontinuous island structure; grain growth; grain size; polycrystallinity; scanning electron microscopy; stoichiometric compositions; Chemical engineering; Fabrication; Fluid flow; Hydrogen; Nitrogen; Photovoltaic cells; Scanning electron microscopy; Sputtering; Tellurium; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488175
Filename
1488175
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