DocumentCode :
440230
Title :
Investigation of the Formation Mechanism of Hemispherical Grained Silicon (HSG-Si) on Undoped and Doped Amorphous Silicon for DRAM Applications
Author :
Ils, A. ; Sallese, J.M. ; Bouvet, D. ; Fazan, P. ; Merrit, C. ; de Waard, H. ; Werkhoven, C.
Author_Institution :
Swiss Federal Institute of Technology, Lausanne, Switzerland
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
232
Lastpage :
235
Keywords :
Amorphous silicon; Annealing; Capacitance; Capacitors; Dielectrics; Grain size; Leg; Random access memory; Rough surfaces; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505482
Link To Document :
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