Investigation of the Formation Mechanism of Hemispherical Grained Silicon (HSG-Si) on Undoped and Doped Amorphous Silicon for DRAM Applications

Author

Ils, A. ; Sallese, J.M. ; Bouvet, D. ; Fazan, P. ; Merrit, C. ; de Waard, H. ; Werkhoven, C.

Author_Institution

Swiss Federal Institute of Technology, Lausanne, Switzerland

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

232

Lastpage

235

Keywords

Amorphous silicon; Annealing; Capacitance; Capacitors; Dielectrics; Grain size; Leg; Random access memory; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505482

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