DocumentCode
440232
Title
A Unified Analytical Model for Bulk and Surface Mobility in Si n- and p-Channel MOSFET´s
Author
Reggiani, S. ; Valdinoci, M. ; Colalongo, L. ; Baccarani, G.
Author_Institution
University of Bologna, Italy
Volume
1
fYear
1999
fDate
13-15 Sept. 1999
Firstpage
240
Lastpage
243
Keywords
Analytical models; Charge carrier processes; Doping; MOSFET circuits; Neodymium; Numerical simulation; Scattering; Semiconductor process modeling; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location
Leuven, Belgium
Print_ISBN
2-86332-245-1
Type
conf
Filename
1505484
Link To Document