DocumentCode :
440246
Title :
Low temperature analysis of 0.25 T-Gate SiGe n-MODFET
Author :
Zerounian, N. ; Aniel, F. ; Adde, R. ; Zeuner, M. ; Hackbarth, T. ; Gruhle, A. ; König, U.
Author_Institution :
Universite Paris-Sud, Orsay, France
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
296
Lastpage :
299
Keywords :
Equivalent circuits; Frequency measurement; Germanium silicon alloys; HEMTs; Hafnium; MODFET circuits; Performance analysis; Performance evaluation; Silicon germanium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505498
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=440246
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