DocumentCode

440261

Title

Reliability Issues of Through-the-Gate-Implanted Utra-Thin Gate Oxides

Author

Grunsfelder, C. ; Kerber, M. ; Schwalke, U.

Author_Institution

Infineon Technologies AG, Munich, Germany

Volume

1

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

360

Lastpage

363

Keywords

Annealing; Boron; CMOS process; Capacitors; Cleaning; Dielectrics; Fabrication; Lead compounds; MOS devices; Oxidation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

conf

Filename

1505514