• DocumentCode
    440275
  • Title

    A 0.35um BiCMOS Process with Selective Epitaxial SiGe Bipolar Transistors

  • Author

    Kuhn, R. ; Decouter, S. ; Caymax, M. ; Vleugels, F. ; Verschooten, E. ; Loo, R. ; Loheac, J.-L.

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    436
  • Lastpage
    439
  • Keywords
    BiCMOS integrated circuits; Bipolar transistors; Boron; Etching; Germanium silicon alloys; Heterojunction bipolar transistors; Human computer interaction; Joining processes; Silicon germanium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505533
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440275