Title :
Narrow Decaborane (B10H14) Implanted Base For High-Speed Si Bipolar Transistors
Author :
Deixler, P. ; Muda, G.C. ; Terpstra, D. ; Klootwijk, J.H. ; van Berkum, J.G.M. ; Havens, R.J.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Keywords :
Bipolar transistors; Boron; Cutoff frequency; Doping; Fabrication; Furnaces; Implants; Laboratories; Production; Rapid thermal annealing;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
