• DocumentCode
    440277
  • Title

    Direct Extraction of Intrinsic Excess Phase Shift Time Constants in SiGe HBTs

  • Author

    Hamel, J.S. ; Leach, G.R. ; Anteney, I.M.

  • Author_Institution
    University of Southampton, UK
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    456
  • Lastpage
    459
  • Keywords
    Bipolar transistors; Computer science; Data mining; Equivalent circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Parasitic capacitance; Scattering parameters; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440277