DocumentCode
440291
Title
Impact of the SOI Substrate Parameters on the Radio-frequency Performance of the Quasi-SOI Power MOSFET
Author
Matsumoto, Satoshi ; Hiraoka, Yasushi ; Yachi, Toshiaki ; Kosugi, Toshihiko ; Kamitsuna, Hideki ; Muraguchi, Masahiro
Author_Institution
NTT Telecommunication Energy Laboratories, Tokyo, Japan
Volume
1
fYear
1999
fDate
13-15 Sept. 1999
Firstpage
528
Lastpage
531
Keywords
Cutoff frequency; Laboratories; MOSFET circuits; Microwave circuits; Power MOSFET; Radio frequency; Silicon on insulator technology; Structural engineering; Substrates; Technological innovation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location
Leuven, Belgium
Print_ISBN
2-86332-245-1
Type
conf
Filename
1505556
Link To Document