• DocumentCode
    440299
  • Title

    High-Performance Delta-Doped InGaP/GaAs Heterojunction Bipolar Transistors

  • Author

    Liu, W.C. ; Pan, H.J. ; Cheng, S.-Y. ; Chen, J.Y. ; Wang, W.C. ; Thei, K.B.

  • Author_Institution
    National Cheng Kung University, Tainan, Taiwan
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    560
  • Lastpage
    563
  • Keywords
    Bipolar transistors; Double heterojunction bipolar transistors; Electrons; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Microwave circuits; Performance gain; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440299