High performance 0.12 um nMOSFETs with nitrogen implanted epitaxial channels

Author

Josse, E. ; Skotnicki, T. ; Regolini, J.L. ; Grouillet, A. ; Papadas, C.

Author_Institution

France Telecom CNET, Meylan, France

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

568

Lastpage

571

Keywords

Boron; Capacitance; Doping profiles; Epitaxial growth; Implants; MOS devices; MOSFET circuits; Nitrogen; Silicon; Telecommunications;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505566

Link To Document