Title :
High performance 0.12 um nMOSFETs with nitrogen implanted epitaxial channels
Author :
Josse, E. ; Skotnicki, T. ; Regolini, J.L. ; Grouillet, A. ; Papadas, C.
Author_Institution :
France Telecom CNET, Meylan, France
Keywords :
Boron; Capacitance; Doping profiles; Epitaxial growth; Implants; MOS devices; MOSFET circuits; Nitrogen; Silicon; Telecommunications;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
