Power MOS transistors parameters at operation impacts

Silicon field effect transistors (power MOS transistors of KP728E1 and their analogs that are manufactured by Transistor Factory of Research and Production Corporation "Integral", city of Minsk, Belarus) have been described. Their general structure, packaging type and electrical properties have been given. The essential part of the paper is dedicated to the influence on the transistor parameters a few main factors of operation period such as electrostatic discharges (ESD), temperature, thermal cycles, mechanical impacts etc. In particularity, the effect of mutual influence of the temperature and different polarity of the ESD at 100 /spl deg/C on the threshold voltage of the transistors has been discovered.