DocumentCode
442360
Title
A physical analysis of HV MOSFET capacitance behaviour
Author
Anghel, C. ; Chauhan, Y.S. ; Hefyene, N. ; Ionescu, A.M.
Author_Institution
EPFL-STI-IMM-LEG, Lausanne, Switzerland
Volume
2
fYear
2005
fDate
20-23 June 2005
Firstpage
473
Abstract
This work reports on the physical effects that appear on the AC characteristics of the high voltage LDMOS transistors. A qualitative explanation for the variation of the charges inside the device is proposed. TCAD simulations are used to sustain the presented theory. Finally, the specific peaks that appear on C/sub GS/ and C/sub GD/ characteristics function of the gate voltage are explained.
Keywords
high-voltage techniques; power MOSFET; AC characteristics; TCAD; gate voltage; high-voltage MOSFET capacitance behaviour; lateral diffused MOS transistors; technology CAD; Automotive engineering; Capacitance; Interface states; Low voltage; MOSFET circuits; Numerical simulation; Radio frequency; Semiconductor device doping; Threshold voltage; Vehicle dynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on
Conference_Location
Dubrovnik, Croatia
Print_ISBN
0-7803-8738-4
Type
conf
DOI
10.1109/ISIE.2005.1528963
Filename
1528963
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