Comparison of DC, RF, and dispersion properties of SOI and strained-SOI N-MOSFETs

The operating performance of SOI and strained-SOI N-MOSFETs are compared. In particular, these properties are examined in detail: 1) electron mobility and DC characteristics, 2) high frequency behavior, 3) dispersion and self-heating effects, and 4) buried oxide interface trap density. Our results demonstrate that SSOI technology can improve f/sub t/ and f/sub max/ conservatively by up to 50% without excessive dispersion/self-heating. Furthermore, measurements indicate that the SSOI wafer bonding process can produce an acceptable buried oxide interface trap density.