DocumentCode :
44267
Title :
A High-Performance Photovoltaic Module-Integrated Converter (MIC) Based on Cascaded Quasi-Z-Source Inverters (qZSI) Using eGaN FETs
Author :
Zhou, Yan ; Liu, Liming ; Li, Hui
Author_Institution :
Center for Adv. Power Syst., Florida State Univ., Tallahassee, FL, USA
Volume :
28
Issue :
6
fYear :
2013
fDate :
Jun-13
Firstpage :
2727
Lastpage :
2738
Abstract :
This paper presents a single-phase grid-connected photovoltaic (PV) module-integrated converter (MIC) based on cascaded quasi-Z-source inverters (qZSI). In this system, each qZSI module serves as an MIC and is connected to one PV panel. Due to the cascaded structure and qZSI topology, the proposed MIC features low-voltage gain requirement, single-stage energy conversion, enhanced reliability, and good output power quality. Furthermore, the enhancement mode gallium nitride field-effect transistors (eGaN FETs) are employed in the qZSI module for efficiency improvement at higher switching frequency. It is found that the qZSI is very suitable for the application of eGaN FETs because of the shoot-through capability. Optimized module design is developed based on the derived qZSI ac equivalent model and power loss analytical model to achieve high efficiency and high power density. A design example of qZSI module is presented for a 250-W PV panel with 25-50-V output voltage. The simulation and experimental results prove the validity of the analytical models. The final module prototype design achieves up to 98.06% efficiency with 100-kHz switching frequency.
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; invertors; photovoltaic power systems; power convertors; wide band gap semiconductors; GaN; ac equivalent model; cascaded quasi-z-source inverters; eGaN FET; field effect transistors; frequency 100 kHz; low-voltage gain requirement; optimized module design; photovoltaic module integrated converter; power 250 W; power loss analytical model; qZSI; single stage energy conversion; voltage 25 V to 50 V; Analytical models; Capacitors; FETs; Inverters; Microwave integrated circuits; Switching frequency; Topology; Gallium nitride field-effect transistors; module-integrated converter (MIC); quasi-Z-source inverter (qZSI);
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2012.2219556
Filename :
6305486
Link To Document :
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