Title :
A 28.5 GHz monolithic cascode LNA with 70GHz fT SiGe HBTs
Author :
Fortes, Fernando ; Freire, J. Costa ; Leenaerts, Domine ; Mahmoudi, Reza ; Van Roermund, Arthur
Author_Institution :
Inst. de Telecomunicacoes, Inst. Superior de Engenharia de Lisboa, Portugal
Abstract :
This paper presents the design and experimental results of a monolithic cascode LNA for 28.5GHz applications using SiGe HBTs. It shows that designing circuits at frequencies beyond fT/3 is possible. The best experimental results are obtained at 26GHz with a 3.3V supply voltage: |S21| = 10.4dB, input and output matching better than -10dB. The measured noise figure is 6.4dB.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; bipolar analogue integrated circuits; heterojunction bipolar transistors; low noise amplifiers; microwave amplifiers; microwave integrated circuits; millimetre wave bipolar transistors; 26 GHz; 28.5 GHz; 3.3 V; 6.4 dB; 70 GHz; HBT circuits; MMICs; SiGe; monolithic cascode LNA; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Inductors; Millimeter wave technology; Noise figure; Noise measurement; Q factor; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN :
0-7803-9205-1
DOI :
10.1109/ESSCIR.2005.1541566