DocumentCode
443195
Title
A 28.5 GHz monolithic cascode LNA with 70GHz fT SiGe HBTs
Author
Fortes, Fernando ; Freire, J. Costa ; Leenaerts, Domine ; Mahmoudi, Reza ; Van Roermund, Arthur
Author_Institution
Inst. de Telecomunicacoes, Inst. Superior de Engenharia de Lisboa, Portugal
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
93
Lastpage
96
Abstract
This paper presents the design and experimental results of a monolithic cascode LNA for 28.5GHz applications using SiGe HBTs. It shows that designing circuits at frequencies beyond fT/3 is possible. The best experimental results are obtained at 26GHz with a 3.3V supply voltage: |S21| = 10.4dB, input and output matching better than -10dB. The measured noise figure is 6.4dB.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; bipolar analogue integrated circuits; heterojunction bipolar transistors; low noise amplifiers; microwave amplifiers; microwave integrated circuits; millimetre wave bipolar transistors; 26 GHz; 28.5 GHz; 3.3 V; 6.4 dB; 70 GHz; HBT circuits; MMICs; SiGe; monolithic cascode LNA; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Inductors; Millimeter wave technology; Noise figure; Noise measurement; Q factor; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN
0-7803-9205-1
Type
conf
DOI
10.1109/ESSCIR.2005.1541566
Filename
1541566
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