Fully-integrated WCDMA SiGeC BiCMOS transceiver

Author

Pellat, Bruno ; Blanc, Jean-Pierre ; Goussin, Franck ; Thevenet, Davy ; Majcherczak, Sandrine ; Reaute, Fabien ; Belot, Didier ; Garcia, Patrice ; Persechini, Pascal ; Cerisier, Patrick ; Conti, Patrick ; Level, Philippe ; Kraemer, Michael ; Granata, Ange

Author_Institution

STMicroelectronics, Crolles, France

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

519

Lastpage

522

Abstract

This paper describes a WCDMA transceiver integrated and in a SiGe-C 0.25um BiCMOS process featuring Ft=60GHz bipolar transistor. The receiver part includes integrated zero-IF RF-Front-End. The transmitter is based on Variable IF architecture and includes a 64 dB gain control. All required PLL´s and associated VCO´s are also integrated. The receiver power consumption is 37mA (PLL included) and the transmitter consumes 60mA both under 2.7V power supply generated by an internal low drop regulator (LDO) directly connected to the battery voltage. Within the receive band, the receiver measurements shown 64dB of overall gain with a 5 dB NF DSB. The transmitter maximum output power is -3 dBm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; code division multiple access; integrated circuit design; phase locked loops; radio receivers; radio transmitters; transceivers; voltage-controlled oscillators; 0.25 micron; 2.7 V; 37 mA; 5 dB; 60 GHz; 60 mA; 64 dB; BiCMOS transceiver; PLL; SiGe; VCO; WCDMA transceiver; bipolar transistor; low drop regulator; BiCMOS integrated circuits; Bipolar transistors; Energy consumption; Gain control; Multiaccess communication; Phase locked loops; Power generation; Power supplies; Transceivers; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European

Print_ISBN

0-7803-9205-1

Type

conf

DOI

10.1109/ESSCIR.2005.1541674

Filename

1541674