Title :
Comparison of two types of lateral DMOSFET optimized for RF power applications
Author :
Muller, Dorothée ; Mourier, Jocelyne ; Perrotin, André ; Szelag, Bertrand ; Monroy, Augustin
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
Integration of RF power amplifier in silicon technology is a new challenge. RF lateral DMOS is one of the main candidates to achieve this objective. In this paper, the integration and optimization of an alternative RF N-type lateral DMOSFET in an advanced 0.25μm RF BiCMOS technology are presented. The main optimization steps on DC and RF parameters are described. Linear characteristics and dynamic performances achieved are equivalent to the standard LDMOS architecture.
Keywords :
BiCMOS integrated circuits; power MOSFET; power semiconductor devices; radiofrequency integrated circuits; 0.25 micron; RF BiCMOS technology; RF power amplifier; lateral DMOSFET; silicon technology; BiCMOS integrated circuits; CMOS technology; Immune system; Low voltage; Performance gain; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers; Silicon;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546601
