DocumentCode
443921
Title
Comparison of two types of lateral DMOSFET optimized for RF power applications
Author
Muller, Dorothée ; Mourier, Jocelyne ; Perrotin, André ; Szelag, Bertrand ; Monroy, Augustin
Author_Institution
STMicroelectronics, Crolles, France
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
125
Lastpage
128
Abstract
Integration of RF power amplifier in silicon technology is a new challenge. RF lateral DMOS is one of the main candidates to achieve this objective. In this paper, the integration and optimization of an alternative RF N-type lateral DMOSFET in an advanced 0.25μm RF BiCMOS technology are presented. The main optimization steps on DC and RF parameters are described. Linear characteristics and dynamic performances achieved are equivalent to the standard LDMOS architecture.
Keywords
BiCMOS integrated circuits; power MOSFET; power semiconductor devices; radiofrequency integrated circuits; 0.25 micron; RF BiCMOS technology; RF power amplifier; lateral DMOSFET; silicon technology; BiCMOS integrated circuits; CMOS technology; Immune system; Low voltage; Performance gain; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546601
Filename
1546601
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