Deep trench isolation effect on self-heating and RF performances of SiGeC HBTs

Author

Barbalat, Benoît ; Schwartzmann, Thierry ; Chevalier, Pascal ; Jagueneau, Thierry ; Vandelle, Benoît ; Rubaldo, Laurent ; Saguin, Fabienne ; Zerounian, Nicolas ; Aniel, Frédéric ; Chantre, Alain

Author_Institution

STMicroelectronics, Crolles, France

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

129

Lastpage

132

Abstract

This paper focuses on the effect of deep trench isolation (DTI) on self-heating and electrical performances of state-of-the-art SiGeC heterojunction bipolar transistors (HBTs). The influence of DTI on the heat dissipation and on the thermal resistance of HBTs is studied both with electrical measurements and simulations. The results show that the DTI has a significant influence on heat dissipation and on the thermal resistance values but only little impact on RF performances.

Keywords

heterojunction bipolar transistors; isolation technology; silicon compounds; thermal resistance; SiGeC; deep trench isolation effect; heat dissipation; heterojunction bipolar transistors; self heating; thermal resistance; Bipolar transistors; Diffusion tensor imaging; Electric resistance; Electrical resistance measurement; Epitaxial growth; Fabrication; Heterojunction bipolar transistors; Radio frequency; Resistance heating; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546602

Filename

1546602