DocumentCode
443923
Title
Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI
Author
Fregonese, S. ; Avenier, G. ; Maneux, C. ; Chantre, A. ; Zimmer, T.
Author_Institution
Lab. de Microelectronique IXL, CNRS, Talence, France
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
153
Lastpage
156
Abstract
The semi-depleted HBT on thin film SOI presents a kink on its electrical characteristics and in particular on the base-collector capacitance. Classical compact models cannot represent this behavior. This paper proposes a new compact formulation of the base-collector junction charge model. Moreover, the impact of this charge on the early effect is shown. Finally, the model is compared to measurements.
Keywords
heterojunction bipolar transistors; semiconductor device models; semiconductor thin films; silicon-on-insulator; Si-SiGe; base-collector capacitance; base-collector junction charge model; electrical characteristics; semi-depleted HBT device; thin film SOI; BiCMOS integrated circuits; CMOS technology; Capacitance; Coupling circuits; Doping; Electric variables; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor thin films; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546608
Filename
1546608
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