Title :
Physics and modeling of Ge-on-insulator MOSFETs
Author :
Chin, Albert ; Kao, H.L. ; Tseng, Y.Y. ; Yu, D.S. ; Chen, C.C. ; McAlister, S.P. ; Chi, C.C.
Author_Institution :
Dept. of Electron. Eng., NCTU, Hsinchu, Taiwan
Abstract :
We have used process and device simulation tools (T-Supreme and Medici) to analyze the measured DC characteristics of Ge-on-insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m*) and smaller Ge energy bandgap - however this also causes a larger off-state Ids leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.
Keywords :
MOSFET; effective mass; elemental semiconductors; energy gap; germanium; leakage currents; semiconductor device models; semiconductor process modelling; semiconductor-insulator boundaries; DC characteristics; GOI MOSFET device; Ge; Medici simulation tool; RF gain performance; T-Supreme simulation tool; device simulation; effective mass; energy bandgap; leakage current; noise performance; process simulation; Analytical models; Effective mass; Leakage current; MOSFETs; Medical simulation; Performance gain; Photonic band gap; Physics; Predictive models; Radio frequency;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546641
