Physics and modeling of Ge-on-insulator MOSFETs

Author

Chin, Albert ; Kao, H.L. ; Tseng, Y.Y. ; Yu, D.S. ; Chen, C.C. ; McAlister, S.P. ; Chi, C.C.

Author_Institution

Dept. of Electron. Eng., NCTU, Hsinchu, Taiwan

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

285

Lastpage

288

Abstract

We have used process and device simulation tools (T-Supreme and Medici) to analyze the measured DC characteristics of Ge-on-insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m*) and smaller Ge energy bandgap - however this also causes a larger off-state I_ds leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.

Keywords

MOSFET; effective mass; elemental semiconductors; energy gap; germanium; leakage currents; semiconductor device models; semiconductor process modelling; semiconductor-insulator boundaries; DC characteristics; GOI MOSFET device; Ge; Medici simulation tool; RF gain performance; T-Supreme simulation tool; device simulation; effective mass; energy bandgap; leakage current; noise performance; process simulation; Analytical models; Effective mass; Leakage current; MOSFETs; Medical simulation; Performance gain; Photonic band gap; Physics; Predictive models; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546641

Filename

1546641