High performance device utilizing ultra-thick-strained-Si (UTSS) grown on relaxed SiGe

We demonstrate a highly manufacturable substrate-induced strained Si device, which is compatible with the conventional Si bulk process. It utilizes ultra-thick-strained Si (UTSS) layer thicker than 3000 Å and relaxed SiGe layer with low Ge content less than 10%. The UTSS n-MOSFET gives 6 ∼ 12% increase in I_on according to the gate length without the cost of increase in I_off. In addition, more than 5% increase in I_on for p-MOSFET can be obtained by hybrid stress of UTSS and SiGe source/drain process. We also emphasize the importance of the ratio of channel resistance (R_CH) to source-drain resistance (R_SD) for performance enhancement.