DocumentCode
443930
Title
Large-area avalanche diodes for picosecond time-correlated photon counting
Author
Gulinatti, A. ; Rech, I. ; Maccagnani, P. ; Ghioni, M. ; Cova, S.
Author_Institution
Dipt. di Elettronica e Informazione, Politecnico di Milano, Italy
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
355
Lastpage
358
Abstract
Time-correlated photon counting experiments in life and material sciences demand photodetectors with single photon sensitivity, low noise and high time resolution. We have developed a planar silicon technology that allows the fabrication of large-area single photon avalanche diodes (SPADs) with unprecedented performance. SPAD devices with 100 μm active area diameter are obtained with dark counting rate of 3 kc/s and time resolution of 35 ps at room temperature. The photon detection efficiency peaks at 48% around 530 nm and stays above 30% in all the visible range. After pulsing probability is much lower than 1%. Thanks to the large active area, good optical collection efficiency can be achieved with relatively simple alignment procedures, thus opening the way to the exploitation of these devices in most demanding applications, such as single-molecule spectroscopy.
Keywords
avalanche diodes; elemental semiconductors; optical instruments; photodetectors; photon counting; silicon; 100 micron; photodetectors; photon detection; photon sensitivity; planar silicon technology; pulsing probability; single molecule spectroscopy; single photon avalanche diodes; time correlated photon counting; Detectors; Diodes; Fluorescence; Optical devices; Photodetectors; Photonics; Signal to noise ratio; Silicon; Spectroscopy; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546658
Filename
1546658
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