• DocumentCode
    443932
  • Title

    Investigation on the compositionally graded HfxAlyOz films for TiN based DRAM capacitor

  • Author

    Kil, Deok-Sin ; Hong, Kwon ; Yeom, Seung-Jin ; Song, Han-Sang ; Park, Ki-Seon ; Roh, Jae-Sung ; Kwak, Noh-Jung ; Sohn, Hyun-Cheol ; Kim, Jin-Woong ; Park, Sung-Wook

  • Author_Institution
    R & D Div., Hynix Semicond. Inc., Kyoungki-Do, South Korea
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    371
  • Lastpage
    374
  • Abstract
    New concept of capacitor dielectric thin film was successfully demonstrated through graded HfxAlyOz dielectric thin film accompanied by post ozone annealing for the application to DRAM capacitor. MIM capacitor with graded HfxAlyOz dielectric films showed drastically reduced leakage current and highly improved breakdown voltage by 0.45-0.75V maintaining the same EOT value. In the case of graded film with Hf/Al=1.5/1, EOT showed very small value of 12.3Å and leakage current could be maintained as low as 1E-16A/cell at +1.0V.
  • Keywords
    DRAM chips; MIM devices; aluminium compounds; dielectric thin films; hafnium compounds; leakage currents; thin film capacitors; 0.45 to 0.75 V; DRAM; HfAlO; MIM capacitor; TiN; breakdown voltage; capacitor dielectric thin film; leakage current; post ozone annealing; Dielectric thin films; Electrodes; Hafnium oxide; Leakage current; MIM capacitors; Random access memory; Semiconductor films; Sputtering; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
  • Print_ISBN
    0-7803-9203-5
  • Type

    conf

  • DOI
    10.1109/ESSDER.2005.1546662
  • Filename
    1546662
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=443932